ms 1 3n 5 0 50 0 v n - channel mosfet publication ord er number: [ ms 1 3n 5 0 ] ? bruckewell technology corporation rev. a - 2014 description the MS13N50 is a n - channel enhancement - mode mosfet, providing the designer with the best combination of fast switching, ruggedized device design, low on - resistance and cost effectiveness. the to - 220 package is universally preferred for all comm ercial - industrial applications features ? originative new design ? very low intrinsic capacitances ? excellent switching characteristics ? 100% eas test ? extended safe operating area ? rohs compliant package a pplication ? electronic lamp ballasts ? based on half bridge topology ? pfc (power factor correction) ? smps (switched mode power supplies) packing & order information 50/tube ; 1,000/box graphic symbol maximum ratings and electrical characteristics absolute maximum ratings (tc=25c u nless otherwise specified) symbol parameter value unit v ds drain - source voltage 5 0 0 v v gs gate - source voltage 30 v i d drain current - continuous (tc=25 c ) 1 3 a drain current - continuous (tc= 100 c ) 8 a i dm drain current C pulsed 5 2 a e as avalanche en ergy 803 mj e ar repetitive avalanche energy 1 9.5 mj p d power dissipation (tc=25c) 195 w power dissipation (tc=100c) 1.56 w/ c
ms 1 3n 5 0 50 0 v n - channel mosfet publication ord er number: [ ms 1 3n 5 0 ] ? bruckewell technology corporation rev. a - 2014 absolute maximum ratings (tc=25c unless otherwise specified) symbol parameter value unit t j /t stg operating junction and storage temperature - 55 to +1 75 c note: 1. pulse width limited by maximum junction temperature 2. duty cycle 1% thermal resistance characteristics symbol parameter typ. max. unit s rthjc typical thermal resistance -- 0.64 c /w r ja -- 62.5 static characteristics symbol test conditions min typ. max. unit s b v dss v gs = 0 v , i d = 250a 5 00 - - -- v b v dss / t j i d = 250a, referenced to 25 c -- 0.50 -- v/ c v gs v ds = v gs , i d = 250a 2.0 4.0 v g fs v ds = 40 v, i d = 6.5a 15 s i dss v ds = 50 0 v , v gs = 0 v v ds = 40 0 v , v gs = 0 v , t j = 125 c -- -- 1 10 u a i gss v gs = 30 -- -- 100 n a *r ds(o n) v gs = - 1 0 v , i d = 6.5 a -- 3.8 4.8 dynamic characteristics symbol test conditions min typ. max. unit s q g v ds = 40 0 v,i d = 13 a, v gs = 10 v -- 43 56 nc q gs -- 7.5 10 nc q g d -- 18.5 24 nc t d(on) v ds = 25 0 v, i d = 13 a, r g = 25 -- 25 57.5 ns t r -- 10 0 220 ns t d(off) -- 13 0 273 ns tf -- 10 0 220 ns c iss v ds = 25 v, v gs = 0 v, f = 1.0mhz -- 1580 2054 pf c oss -- 180 234 pf c rss -- 20 28 pf source - drain diode characteristics symbol test conditions min typ. max. unit s i s -- -- 13 a i sm -- -- 52
ms 1 3n 5 0 50 0 v n - channel mosfet publication ord er number: [ ms 1 3n 5 0 ] ? bruckewell technology corporation rev. a - 2014 v sd if = is, v gs = 0 -- -- 1.4 v t rr if = is, dif/dt=100a/s -- 410 -- ns q rr -- 4.5 -- uc notes: 1. repeativity rating : pulse width limited by junction temperature 2. l=9.5mh,ias=13a,vdd=50v,rg=25,starting tj=25?c 3. isd 13a, di/dt 200a/s, vdd bvdss, starting tj = 25c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature.
ms 1 3n 5 0 50 0 v n - channel mosfet publication ord er number: [ ms 1 3n 5 0 ] ? bruckewell technology corporation rev. a - 2014 characteristics curve fig.1 - on region characteristics fig. 2 - transfer characteristics fig.3 - on resistance variation vs drain current and gate voltage fi g.4 - body diode forward voltage variation with source current and temperature fig.5 - capacitance characteristics fig.6 - gate charge characteristics
ms 1 3n 5 0 50 0 v n - channel mosfet publication ord er number: [ ms 1 3n 5 0 ] ? bruckewell technology corporation rev. a - 2014 characteristics curve fig. 7 - breakdown voltage variation vs temperature fig. 8 - on - resistance var iation vs temperature fig. 9 - maximum safe operating area fig. 10 - maximum drain current vs case temperature fig. 11 - transient thermal response curve
ms 1 3n 5 0 50 0 v n - channel mosfet publication ord er number: [ ms 1 3n 5 0 ] ? bruckewell technology corporation rev. a - 2014 characteristics test circuit & waveform fig.1 2 - resistive switching test circuit & waveforms fig. 13 - gate charge test circuit & waveform fig. 14 - unclamped linductive switching test circuit & waveforms
ms 1 3n 5 0 50 0 v n - channel mosfet publication ord er number: [ ms 1 3n 5 0 ] ? bruckewell technology corporation rev. a - 2014 fig 15. peak diode recovery dv/dt test circuit & waveforms
ms 1 3n 5 0 50 0 v n - channel mosfet publication ord er number: [ ms 1 3n 5 0 ] ? bruckewell technology corporation rev. a - 2014 disclaimer all product, product specifications and data are subject to chan ge without notice to improve reliability, function or design or otherwise. bruckewell technology inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, bruckewell), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the con tinuing production of any product. to the maximum extent permitted by applicable law, bruckewell disclaims (i) any and all liability arising out of the application or use of any product. (ii) any and all liability, including without limitation special, co nsequential or incidental damages. (iii) any and all implied warranties, including warranties of fitness for particular purpose, non - infringement and merchantability. statements regarding the suitability of products for certain types of applications are ba sed on bruckewells knowledge of typical requirements that are often placed on bruckewell products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers res ponsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specifications may vary in different applications and per formance may vary over time. product specifications do not expand or otherwise modify bruckewells terms and conditions of purchase, including but not limited to the warranty expressed therein.
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